Temperature-dependent electron mobility in GaN: Effects of space charge and interface roughness scattering

摘要: We compute temperature‐dependent electronic mobilities in GaN through Monte Carlo simulations. Bulk material having ionized impurities, and a quantum well structure are examined. Our values show good agreement with recently obtained experimental data on bulk only when space‐charge scattering is taken into account. Though simple form for the internal potential variation has been used, more realistic distributions could easily be incorporated present simulation scheme. Mobilities wells have also by explicitly taking account of interface roughness scattering. The predicted yield theoretical upperbound fairly close to measured data.