Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures
作者： W. Knap , C. Skierbiszewski , K. Dybko , J. Łusakowski , M. Siekacz
DOI: 10.1016/J.JCRYSGRO.2005.03.025
关键词: Impurity 、 Electron 、 Heterojunction 、 Electron mobility 、 Dislocation 、 Chemistry 、 Liquid helium 、 Ionized impurity scattering 、 Condensed matter physics 、 Molecular beam epitaxy
摘要: Abstract The mobility of electrons forming the two-dimensional gas in GaN/AlGaN heterostructures is reviewed connection with recent technological achievements plasma-assisted molecular beam epitaxy (MBE) growth. We discuss dependence room temperature and liquid helium mobilities on dislocation density, impurity concentration compensation. This allows proposing directions developments leading to an improvement electron heterostructures. also present results record observed grown by MBE bulk GaN crystals.
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