Charge transport diagnosis by: I–V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers
作者： Andrzej Wolkenberg , Tomasz Przesławski
DOI: 10.1016/J.APSUSC.2008.04.061
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摘要: Abstract We propose using collected galvano-magnetic data on MBE samples of n-type undoped epi-layers InAs, In0.57Ga0.47As and GaAs InP semi-insulating substrates to characterize their charge transport properties. Hall concentration resistance measurements vs. temperature were carried out, these results allowed us calculate the mean free path magnetic length. However, they are mono-crystalline, present multi-component structures. The characterization layers by means a combined analysis properties, I–V (resistivity), screening Debye length, path, Mott effect Bohr radius characteristics gave new very interesting results. application previously described method also allows for presence transition be determined. leads hypothesis that part conductance in such layers, especially at low temperatures may due an impurity band. suppose either during epitaxial growth all investigated unintentionally doped with excess atoms one component, vacancies other or dangling bonds present. Therefore, range temperatures, possible dominant conduction mechanism is via defects, electrons moving thermally activated hopping.
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