Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films
作者： Chin-Ching Lin , San-Yuan Chen , Syh-Yuh Cheng
DOI: 10.1016/J.APSUSC.2004.05.255
关键词: Transmission electron microscopy 、 Thin film 、 Scanning electron microscope 、 Phosphide 、 Crystallinity 、 Solubility 、 Photoluminescence 、 Chemical engineering 、 Annealing (metallurgy) 、 Mineralogy 、 Materials science
摘要: Abstract ZnO films were implanted with phosphorus in the range from 5×10 12 to 15 cm −2 . Effect of concentration on structural characteristics and photoelectric behavior phosphorus-implanted under different atmosphere annealing treatment was investigated. It has been demonstrated that below solubility (1.5×10 18 ions/cm 3 ), defect formation will be dominated by more defects can formed oxygen ambient than nitrogen as revealed PL spectra. However, excess doping, above induce phosphide compounds seriously deteriorate crystallinity optical property films. a high-resistive but not p-type film is obtained doping.
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