Structural, electrical, and optical characteristics of lithium-implanted ZnO thin films
作者： S. Nagar , S.K. Gupta , S. Chakrabarti
DOI: 10.1016/J.SPMI.2012.10.008
关键词: Photoluminescence 、 X-ray crystallography 、 Thin film 、 Scanning electron microscope 、 Materials science 、 Exciton 、 Annealing (metallurgy) 、 Ion 、 Analytical chemistry 、 Pulsed laser deposition
摘要: Abstract Lithium ions were implanted at low energies (40 and 50 keV) a dosage of 5 × 1013 ions/cm2 over 〈0 0 2〉 ZnO thin films that had been deposited by pulsed laser deposition. The samples subsequently treated rapid thermal annealing 750 °C. Scanning electron microscopy images revealed improved grain formation for the samples. However, presence microvoids was also observed in these samples; amount tended to increase on high-temperature annealing. Dominant donor-bound-exciton peaks is all along with some defect related exciton bound although lesser intensity compared as-deposited sample.
harvard.edu
sci-hub.se 参考文章(28)
O. Lopatiuk, L. Chernyak, A. Osinsky, J. Q. Xie, Lithium-related states as deep electron traps in ZnO Applied Physics Letters. ,vol. 87, pp. 214110- ,(2005) , 10.1063/1.2136348
B.K. Meyer, J. Sann, A. Zeuner, Lithium and sodium acceptors in ZnO Superlattices and Microstructures. ,vol. 38, pp. 344- 348 ,(2005) , 10.1016/J.SPMI.2005.08.006
Veeramuthu Vaithianathan, Byung-Teak Lee, Sang Sub Kim, Pulsed-laser-deposited p-type ZnO films with phosphorus doping Journal of Applied Physics. ,vol. 98, pp. 043519- ,(2005) , 10.1063/1.2011775
M. R. Wagner, G. Callsen, J. S. Reparaz, J.-H. Schulze, R. Kirste, M. Cobet, I. A. Ostapenko, S. Rodt, C. Nenstiel, M. Kaiser, A. Hoffmann, A. V. Rodina, M. R. Phillips, S. Lautenschläger, S. Eisermann, B. K. Meyer, Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers Physical Review B. ,vol. 84, pp. 035313- ,(2011) , 10.1103/PHYSREVB.84.035313
WF Liu, JM Bian, LZ Hu, HW Liang, HQ Zang, JC Sun, ZW Zhao, AM Liu, GT Du, None, Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition Solid State Communications. ,vol. 142, pp. 655- 658 ,(2007) , 10.1016/J.SSC.2007.03.005
Chin-Ching Lin, San-Yuan Chen, Syh-Yuh Cheng, Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films Applied Surface Science. ,vol. 238, pp. 405- 409 ,(2004) , 10.1016/J.APSUSC.2004.05.255
Veeramuthu Vaithianathan, Shunichi Hishita, Jae Young Park, Sang Sub Kim, Photoluminescence in phosphorous-implanted ZnO films Journal of Applied Physics. ,vol. 102, pp. 086107- ,(2007) , 10.1063/1.2800278
JC Sun, JZ Zhao, HW Liang, JM Bian, LZ Hu, HQ Zhang, XP Liang, WF Liu, GT Du, None, Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO∕p-ZnO:As∕GaAs structure Applied Physics Letters. ,vol. 90, pp. 121128- ,(2007) , 10.1063/1.2716206
Y. J. Li, Y. W. Heo, Y. Kwon, K. Ip, S. J. Pearton, D. P. Norton, Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition Applied Physics Letters. ,vol. 87, pp. 072101- ,(2005) , 10.1063/1.2010600
Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, B. H. Zhao, Dopant source choice for formation of p-type ZnO: Li acceptor Applied Physics Letters. ,vol. 88, pp. 062107- ,(2006) , 10.1063/1.2172743