A novel barrier model for fluctuation-induced tunnelling in highly conductive polyacetylene
作者： G Paasch , G Lehmann , L Wuckel
DOI: 10.1016/0379-6779(90)90119-6
关键词: Doping 、 Quantum tunnelling 、 Anisotropy 、 Effective mass (solid-state physics) 、 Polyacetylene 、 Dopant 、 Materials science 、 Condensed matter physics 、 Electrical conductor
摘要: Abstract A reexamination of the model fluctuation-induced tunnelling for Naarmann polyacetylene shows that its proper application leads to much more reasonable barrier parameters than obtained in recently published work. The remaining serious inconsistencies can be removed by assuming an inhomogeneous distribution dopants. According Kivelson and Heeger, higher doped regions Peierls distortion may suppressed. These ‘metallic’ are separated other where commensurate gap still exists. corresponding small effective mass determines through these regions. This yields quite fresh samples also allows explanation anisotropy ageing behaviour.
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