Defect production by MeV cluster impacts

摘要: Abstract Monocrystalline silicon has been irradiated by MeV carbon and germanium clusters (Cn, n = 1, 2, 3, 4, 6, 8 Gen, 3) with fluences up to 3 × 1016 atoms per cm2. The energy varied between 0.2 4 atom. produced defect concentration profiles have measured channeling Rutherford backscattering (RBS). While the damage at end of range particles (where fragments a cluster straggled far apart) is independent size, in first few hundred nm below sample surface depends significantly on size molecule. Up approximately 6 swift (for which electronic stopping clearly dominant) produce fewer defects incident constituent than single same velocity. For larger production atom increased. appreciably slower polyatomic Ge particles, however, show strong enhancement close surface. This increases strongly but reduced for higher energies. From shape profile radius interaction individual fragment tracks one can be estimated.