Fullerene ion (C/sub 60//sup +/) implantation in GaAs[100] substrate
作者： T. Nishihara , H. Katsumata , J. Matsuo , I. Yamada
关键词: Fullerene 、 Channelling 、 Spectral line 、 Materials science 、 Rutherford backscattering spectrometry 、 Ion 、 Crystallography 、 Vacancy defect 、 Doping 、 Ion implantation
摘要: Fullerene ion (C/sub 60//sup +/) implantation in GaAs[100] substrates was performed to study the amount of vacancies created by carbon cluster GaAs. C/sub +/ ions were implanted at room temperature with atomic doses from 6/spl times/10/sup 12/ atoms/cm/sup 2/ 3/spl 15/ energy between 60 keV (i.e. 1.0 per atom 60/ fullerene) and 300 (5.0 atom). 2//sup +/-implantation GaAs also 10 atom) 2/spl 13/ 14/ compare generation that a small ion-implantation. Rutherford backscattering spectrometry (RBS) analysis for +/, order vacancies. The channeling RBS spectra showed one magnitude higher than +/-implantation. This high vacancy is caused non-linear multiple collision effect large bombardment. result strongly indicates highly effective As generation.
sci-hub.se 参考文章(15)
A. Hallén, P. Håkansson, N. Keskitalo, J. Olsson, A. Brunelle, S. Della-Negra, Y. Le Beyec, Vacancy related defect profiles in MeV cluster-ion irradiated silicon Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 106, pp. 233- 236 ,(1995) , 10.1016/0168-583X(95)00709-1
Toshio Seki, Takaaki Aoki, Masahiro Tanomura, Jiro Matsuo, Isao Yamada, Energy dependence of a single trace created by C60 ion impact Materials Chemistry and Physics. ,vol. 54, pp. 143- 146 ,(1998) , 10.1016/S0254-0584(98)00097-2
B. T. Cunningham, L. J. Guido, J. E. Baker, J. S. Major, N. Holonyak, G. E. Stillman, Carbon diffusion in undoped,n‐type, andp‐type GaAs Applied Physics Letters. ,vol. 55, pp. 687- 689 ,(1989) , 10.1063/1.101822
R. Morton, S. S. Lau, D. B. Poker, P. K. Chu, Coimplantation of carbon and group II acceptors in GaAs Applied Physics Letters. ,vol. 68, pp. 1135- 1137 ,(1996) , 10.1063/1.115737
I. Yamada, J. Matsuo, Z. Insepov, M. Akizuki, Surface modifications by gas cluster ion beams Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 106, pp. 165- 169 ,(1995) , 10.1016/0168-583X(95)00697-4
I. Yamada, G.H. Takaoka, M.I. Current, Y. Yamashita, M. Ishii, Irradiation effects of gas-cluster CO2 ion beams on Si international conference on ion implantation technology. ,vol. 74, pp. 341- 346 ,(1993) , 10.1016/0168-583X(93)95073-E
M. Döbeli, F. Ames, R.M. Ender, M. Suter, H.A. Synal, D. Vetterli, Defect production by MeV cluster impacts Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 106, pp. 43- 46 ,(1995) , 10.1016/0168-583X(95)00675-3
L. C. Feldman, R. L. Kauffman, P. J. Silverman, R. A. Zuhr, John H. Barrett, Surface Scattering from W Single Crystals by MeV He + Ions Physical Review Letters. ,vol. 39, pp. 38- 41 ,(1977) , 10.1103/PHYSREVLETT.39.38
Naoki Kobayashi, Toshiki Makimoto, Yoshiji Horikoshi, Abrupt p‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy Applied Physics Letters. ,vol. 50, pp. 1435- 1437 ,(1987) , 10.1063/1.97846
T. J. de Lyon, N. I. Buchan, P. D. Kirchner, J. M. Woodall, G. J. Scilla, F. Cardone, High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs Applied Physics Letters. ,vol. 58, pp. 517- 519 ,(1991) , 10.1063/1.104600