Coimplantation of carbon and group II acceptors in GaAs

作者: R. Morton , S. S. Lau , D. B. Poker , P. K. Chu

DOI: 10.1063/1.115737

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摘要: Coimplantation of carbon and one the group II acceptors Mg, Zn, or Cd, was performed in GaAs using doses 5×1014 cm−2, resulting p‐type electrical activity studied. Carbon coimplantation offers a means maintaining III–V stoichiometry, which is known to be beneficial for both activation. The implantation profiles show reduced diffusivity from balance stoichiometry provides. elements Zn Cd create substantial damage therefore help assist activation by supplying necessary abundance As vacancies. Mg coimplantation, because light mass ion, does not significant amount lattice at this dose consequently implanted remains inactive, results conductivity. This investigation differs past III studies coimplanted species, carbon, contr...

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