Semiconductor light emitting device and method for producing the same
作者： Yoshiro Akagi , Fumihiro Konushi , Masanori Watanabe , Masaya Ishida , Nobuhiro Okubo
DOI:
关键词: Light emitting device 、 Compound semiconductor 、 Group (periodic table) 、 Active layer 、 Materials science 、 Optoelectronics 、 Current (fluid) 、 Carbon 、 Semiconductor 、 Blocking (radio)
摘要: A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; p-type and an active layer. Carbon atoms II-group element are both added to at least one the layers. Alternatively, carbon Si Another has current blocking structure formed on double hetero (DH) junction structure, includes two-layered layers including Se-doped first layer provided closer DH Si-doped second
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