Low operating current and low noise semiconductor laser device for optical disk memories
作者： Kunio Itoh , Masahiro Kume , Issei Ohta , Toru Takayama , Hiroki Naito
DOI:
关键词: Optoelectronics 、 Cladding (fiber optics) 、 Laser 、 Conduction type 、 Materials science 、 Optics 、 Semiconductor 、 Low noise 、 Optical disc 、 Active layer 、 Light source
摘要: A semiconductor laser device suitable as a light source for an optical disk may be operated at low operating current with noise the 780 nm band. The comprises: certain conduction type Ga 1-Y1 Al Y1 As first guide layer, 1-Y2 Y2 second layer of said type, or In 0 .5 P (GaAl) InGaAsP successively formed one upon another least in side principal plane active layer; opposite 1-Z Z blocking on and provided stripe-like window; 1-Y3 Y3 cladding same layers window. relations Z>Y3>Y2 Y1>Y2 define AlAs mole fractions.
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