Carbon diffusion in undoped,n‐type, andp‐type GaAs
作者： B. T. Cunningham , L. J. Guido , J. E. Baker , J. S. Major , N. Holonyak
DOI: 10.1063/1.101822
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摘要: The effects of background doping, surface encapsulation, and As4 overpressure on carbon diffusion have been studied by annealing samples with 1000 A p‐type doping spikes grown within 1 μm layers undoped (n−), Se‐doped (n+), Mg‐doped (p+) GaAs. were low‐pressure metalorganic chemical vapor deposition using CCl4 as the source. Two different conditions investigated: (1) equilibrium pAs4 over GaAs (no excess As), (2) ∼2.5 atm. For each condition, both capless Si3N4‐capped n−‐, n+‐, p+‐GaAs crystals annealed simultaneously (825 °C, 24 h). Secondary‐ion mass spectroscopy was used to measure atomic depth profiles. coefficient is always low, but depends being highest in lowest (n+) influence encapsulation (Si3N4) minimal.
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