Laser Induced Redistribution of Ion Implanted and Surface Deposited B in Silicon: A SIMS Study *
作者： W. H. Christie , R. J. Warmack , C. W. White , J. Narayan
DOI: 10.1007/978-3-642-61871-0_30
关键词: Laser 、 Ion 、 Secondary ion mass spectrometry 、 Dopant 、 Ion implantation 、 Materials science 、 Analytical chemistry 、 Annealing (metallurgy) 、 Surface coating 、 Silicon
摘要: Recently, it has been shown that high powered pulses of laser radiation can be used to anneal ion implanted silicon [1]. Changes in the implant dopant profile as a result annealing provides fundamental insight into mechanism. Consequently, we have secondary mass spectrometry (SIMS) investigate effect on distribution and surface deposited boron single crystal silicon.
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sci-hub.st 参考文章(3)
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