Laser annealing of boron‐implanted silicon
作者： R. T. Young , C. W. White , G. J. Clark , J. Narayan , W. H. Christie
DOI: 10.1063/1.89959
关键词:
摘要: … with conventional thermal annealing results. Our results show that laser annealing leaves substantially less residual radiation damage than does conventional thermal annealing. In …
harvard.edu
osti.gov
scitation.org
aip.org
sci-hub.se 参考文章(4)
J. Krynicki, J. Suski, S. Ugniewski, R. Grötzschel, R. Klabes, U. Kreissig, J. Rüdiger, Laser annealing of arsenic implanted silicon Physics Letters A. ,vol. 61, pp. 181- 182 ,(1977) , 10.1016/0375-9601(77)90286-9
R. Baron, G. A. Shifrin, O. J. Marsh, James W. Mayer, Electrical Behavior of Group III and V Implanted Dopants in Silicon Journal of Applied Physics. ,vol. 40, pp. 3702- 3719 ,(1969) , 10.1063/1.1658260
L. Csepregi, E. F. Kennedy, S. S. Lau, J. W. Mayer, T. W. Sigmon, Disorder produced by high‐dose implantation in Si Applied Physics Letters. ,vol. 29, pp. 645- 648 ,(1976) , 10.1063/1.88886
Sigurd Wagner, Diffusion of Boron from Shallow Ion Implants in Silicon Journal of The Electrochemical Society. ,vol. 119, pp. 1570- 1576 ,(1972) , 10.1149/1.2404044