Disorder produced by high‐dose implantation in Si
作者： L. Csepregi , E. F. Kennedy , S. S. Lau , J. W. Mayer , T. W. Sigmon
DOI: 10.1063/1.88886
关键词:
摘要: Channeling measurements with MeV 4He ions were used to investigate the disorder distributions produced in 〈111〉 and 〈100〉 Si samples by implantation at substrate temperatures from −180 300 °C. The results indicate that for high doses (1015–1016 ions/cm2) a deep stable disordered region is present both orientations implanted above room temperature but absent room‐temperature lower implants. colors have been observed on surface of similar implants are found be correlated thickness thin crystalline layer surface.
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