EPR OF LASER-ANNEALED, ION-IMPLANTED SILICON
作者： K.L. Brower , P.S. Peercy
DOI: 10.1016/B978-0-12-746850-1.50066-9
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摘要: Electron paramagnetic resonance and ion backscattering measurements were made on ion-implanted, pulsed laser annealed silicon. For phosphorus implanted silicon (3×10 13 200 keV P + /cm 2 ) the electrical activity of donors is restored after annealing with ≥1.8 J/cm . Silicon amorphous 2×10 15 Si 3×10 can be to crystallinity annealing, but was not due residual defects for energies ≲ 3 Electrical restored, at least in part, lower (≈ 50 keV). We also observed that N present implantation 28 followed by annealing.
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