作者: A.R. Kirkpatrick
DOI: 10.1016/B978-0-12-746850-1.50087-6
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摘要: Possible applications of transient processing to the formation semiconductor device materials include growth surface coatings such as oxides or nitrides, bulk crystalline and preparation graded composition compound material layers. Transient energy beam methods offer important characteristics but will have be utilized in conjunction with separate procedures which can provide mass components for growth.