DAMAGE RECRYSTALLIZATION PHENOMENA AND IMPURITY SEGREGATION IN ION-IMPLANTED AND LASER-ANNEALED SILICON
作者： A.G. Cullis , H.C. Webber , D.V. McCaughan , N.G. Chew
DOI: 10.1016/B978-0-12-746850-1.50028-1
关键词:
摘要: Transmission electron microscope studies and electrical measurements have been used to determine the properties of Si layers annealed with Q-switched ruby laser radiation after implantation ions Group III or V dopants. The structure transitions depth distributions defects occurring during conversion initial amorphous single crystal material identified. importance preferential absorption in an layer has demonstrated. Evidence for formation undercooled melts at low irradiation energy densities obtained effect shock waves propagating through regions observed. different polycrystal measured. segregation cells by excess solubility dopants related occurrence constitutional supercooling resolidification laser-melted material.
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