Surface electronic structure of plasma-treated indium tin oxides

作者: HY Yu , XD Feng , D Grozea , ZH Lu , RNS Sodhi

DOI: 10.1063/1.1367897

关键词: Band gapWork functionX-ray photoelectron spectroscopyAnalytical chemistryElectronic structureChemistryIndium tin oxideTinIndiumFermi level

摘要: … XPS has been used to study the electronic structures of indium tin oxide ITO surfaces treated by O , Ar … The XPS data show that there is a significant change in core level energies (In 3d5/…

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