On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements

摘要: III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding coefficient C typically obtained measurements using mathematical models. However, coefficients reported for InGaN active layers vary over two orders magnitude. We here investigate uncertainty and apply successively more accurate models to the same measurement, thereby revealing strong sensitivity quantum well properties such electron-hole ratio, electric field, hot carrier escape.