Ultrafast and band-selective Auger recombination in InGaN quantum wells
作者： Kristopher W. Williams , Nicholas R. Monahan , Daniel D. Koleske , Mary H. Crawford , X.-Y. Zhu
DOI: 10.1063/1.4945669
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摘要: In InGaN quantum well based light-emitting diodes, Auger recombination is believed to limit the efficiency at high injection currents. Here, we report direct observation of carrier loss from on a sub-picosecond timescale in single using time-resolved photoemission. Selective excitations different valence sub-bands reveal that rate constant decreases by two orders magnitude as effective hole mass decreases, confirming critical role momentum conservation.
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