A novel high performance enhanced-planar IGBT with P-type buried layer
作者： Jinping Zhang , Xiaojun Xia , Zehong Li , Wei Li , Yadong Shan
DOI: 10.1109/ICCCAS.2013.6765244
关键词: Planar 、 Electric field modulation 、 Ion implantation 、 Layer (electronics) 、 Breakdown voltage 、 Optoelectronics 、 Diffusion (business) 、 Doping 、 Electrical engineering 、 Materials science 、 Insulated-gate bipolar transistor
摘要: A novel high performance enhanced-planar IGBT with p-type buried layer (PBL-EPIGBT) is proposed in this paper. The (PBL) placed outside the n-type carrier stored (N-CS) and encompasses it partially. Compatible conventional EPIGBT technology, PBL of structure can be formed by ion implantation diffusion before formation N-CS layer. Since additional bulk electric field modulation introduced from charges PBL, negative impact positive on breakdown voltage (BV) addressed effectively. breaks limitation doping concentration (NN-CS) BV hence, a higher NN-CS used for PBL-EPIGBT almost constant BV. As result, comparison without offers not only BV, but also improved Eoff-Vce(on) trade-off characteristics.
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