Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability
作者： M. Rahimo , A. Kopta , S. Linder
DOI: 10.1109/ISPSD.2006.1666064
关键词:
摘要: In this paper, we introduce an IGBT planar technology, which sets a new performance benchmark in terms of losses and SOA capability. The improved trade-off relationship between on-state V ce(sat) turn-off E off (i.e. technology curve) was solely realized by means cell enhancement. Simultaneously, high levels ruggedness (RBSOA) were obtained with the design. Enhanced-Planar is implemented on Soft-Punch-Through (SPT) buffer concept for ensuring controllable soft switching behaviour. paper will cover design details full set results 6500V EP-IGBT chip.
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