Next generation of IGBT-modules applied to high power traction
作者： Mark M. Bakran , Hans-Gunter Eckel , Martin Helsper , Andreas Nagel
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摘要: … switching across a single IGBT and its freewheeling diode does not only change due to its own di/dt, but also due to di/dt … on the maximum junction temperature the latest IGBT have a …
uni-bayreuth.de参考文章(7)
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