Ultra high voltage semiconductor power devices for grid applications
M. T. Rahimo
international electron devices meeting
8
2010
Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes
U. Schlapbach , A. Kopta , S. Linder , S. Eicher
international symposium on power semiconductor devices and ic's 437 -440
56
2004
Novel Soft-Punch-Through (SPT) 1700V IGBT Sets Benchmark on Technology Curve
M. Rahimo , A. Kopta , W. Lukasch , S. Dewar
34
2001
A LandmarkinElectrical Performance ofIGBT Modules Utilizing NextGeneration ChipTechnologies
S. Eicher , A. Kopta , U. Schlapbach , M. Rahimo
24
2006
Electrical transients of snubber diodes in GTO circuits
P.T. Hoban , M. Rahimo , N.Y.A. Shammas
european conference on power electronics and applications 368 -373
4
2002
Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV
M. Rahimo , A. Kopta , S. Eicher , N. Kaminski
international symposium on power semiconductor devices and ic's 41 -44
48
2002
Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability
M. Rahimo , A. Kopta , S. Linder
international symposium on power semiconductor devices and ic's 1 -4
43
2006
1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraints
U. Schlapbach , M. Rahimo , C. von Arx , A. Mukhitdinov
international symposium on power semiconductor devices and ic's 9 -12
32
2007
Silicon based devices for demanding high power applications
A. Kopta , J. Vobecky , M. Rahimo , T. Wikstrom
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)
1
2018
SiC: Technology Enabler for MV DC/DC Galvanically Insulated Modular Converters
S. Alvarez , M. Bellini , U. Vemulapati , F. Canales
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) 4009 -4015
2018
Robust 3.3kV silicon carbide MOSFETs with surge and short circuit capability
L. Knoll , A. Mihaila , F. Bauer , V. Sundaramoorthy
international symposium on power semiconductor devices and ic's 243 -246
15
2017
Experimental investigation of SiC 6.5kV JBS diodes safe operating area
A. Mihaila , E. Bianda , L. Knoll , U. Vemulapati
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) 53 -56
4
2017
Topologies, voltage ratings and state of the art high power semiconductor devices for medium voltage wind energy conversion
B. Backlund , M. Rahimo , S. Klaka , J. Siefken
2009 IEEE Power Electronics and Machines in Wind Applications 1 -6
32
2009
Characterization of a n+3C/n-4H SiC heterojunction diode
R. A. Minamisawa , A. Mihaila , I. Farkas , V. S. Teodorescu
Applied Physics Letters 108 ( 14) 143502
9
2016
Recent progress and current issues in SiC semiconductor devices for power applications
C.M. Johnson , N.G. Wright , M.J. Uren , K.P. Hilton
IEE Proceedings - Circuits, Devices and Systems 148 ( 2) 101 -108
25
2001
Introducing a 1200V vertical merged IGBT and Power MOSFET: The HUBFET
B. T. Donnellan , P. A. Mawby , M. Rahimo , L. Storasta
applied power electronics conference 152 -156
6
2012
The current status and future prospects of SiC high voltage technology
A. Mihaila , L. Knoll , E. Bianda , M. Bellini
international electron devices meeting
15
2018
The next generation high voltage IGBT modules utilizing Enhanced-Trench ET-IGBTs and Field Charge Extraction FCE-Diodes
M. Andenna , Y. Otani , S. Matthias , C. Corvasce
european conference on power electronics and applications 1 -11
8
2014
Dynamic switching and short circuit capability of 6.5kV silicon carbide MOSFETs
L. Knoll , A. Mihaila , L. Kranz , M. Bellini
international symposium on power semiconductor devices and ic s
9
2018
Effects of the HV-BIGT Design Elements on the High-Frequency Oscillation Instability during Short Circuit Transients
P. Diaz Reigosa , C. Papadopoulos , F. Iannuzzo , C. Corvasce
international symposium on power semiconductor devices and ic s 55 -58
2019