Dynamic switching and short circuit capability of 6.5kV silicon carbide MOSFETs
作者： L. Knoll , A. Mihaila , L. Kranz , M. Bellini , S. Wirths
DOI: 10.1109/ISPSD.2018.8393700
关键词:
摘要: Electrically robust 6.5kV SiC MOSFETs are investigated for the static and dynamic performance, short circuit capability safe operation area (SOA). rated at were fabricated with different cell pitches from 12μm to 26μm that able withstand pulses of up 8μs have a turn-off SOA 4400V twice nominal current Inom. The paralleling four was tested represent realistic setup while showing substantial reduction in switching loss by more than 80% compared silicon IGBT Diode.
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