6.5kV Silicon Carbide Discontinuous Trenched Junction Barrier Schottky Diode
作者： Zhiyu Chen , Xuan Li , Xiaochuan Deng , Juntao Li , Zhiqiang Li
DOI: 10.1109/SSLCHINAIFWS49075.2019.9019785
关键词:
摘要: In this paper, a new affordable trenched junction barrier Schottky (TJBS) called discontinuous TJBS (DTJBS) diode is proposed and investigated for its better current conduction capability than TJBS. has poor area of contact, which the main cause increment forward voltage (V f ) compared with DTJBS diode. order to optimize V , physical insights into 6.5kV silicon carbide (SiC) carried out by TCAD Silvaco, then shielding effect are analyzed verify advantages DTJBS’s lower . Eventually, The device achieves 1.89V while 15A.
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