Effects of the HV-BIGT Design Elements on the High-Frequency Oscillation Instability during Short Circuit Transients
作者： P. Diaz Reigosa , C. Papadopoulos , F. Iannuzzo , C. Corvasce , M. Rahimo
DOI: 10.1109/ISPSD.2019.8757575
关键词:
摘要: The design elements of the Bi-mode Insulated Gate Transistor BIGT show that combination high hole injection levels supplied from collector together with presence a localized lifetime control at MOS cells have brought improvements on short circuit capability, strongly minimizing high-frequency oscillations observed in IGBTs. concept and traditional IGBT structures been compared under conditions to investigate charge-field interactions cells, triggering oscillation mechanism. effect irradiation method capability is investigated.
sci-hub.se 参考文章(6)
Liutauras Storasta, Sven Matthias, Arnost Kopta, Munaf Rahimo, Bipolar transistor gain influence on the high temperature thermal stability of HV-BiGTs international symposium on power semiconductor devices and ic's. pp. 157- 160 ,(2012) , 10.1109/ISPSD.2012.6229047
Munaf Rahimo, Liutauras Storasta, Arnost Kopta, Chiara Corvasce, Resolving Design Trade-offs with the BIGT Concept PCIM Europe 2014; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. pp. 1- 8 ,(2014)
M. Rahimo, A. Kopta, W. Lukasch, S. Dewar, S. Linder, C. von Arx, R. Schnell, Novel Soft-Punch-Through (SPT) 1700V IGBT Sets Benchmark on Technology Curve ,(2001)
Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Chiara Corvasce, Frede Blaabjerg, Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations IEEE Transactions on Power Electronics. ,vol. 33, pp. 5603- 5612 ,(2018) , 10.1109/TPEL.2017.2783044
Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Chiara Corvasce, Frede Blaabjerg, Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability applied power electronics conference. pp. 1722- 1728 ,(2018) , 10.1109/APEC.2018.8341250
Vera van Treek, Hans-Joachim Schulze, Franz-Josef Niedernostheide, Christian Sandow, Roman Baburske, Frank Pfirsch, Influence of doping profiles and chip temperature on short-circuit oscillations of IGBTs international symposium on power semiconductor devices and ic s. pp. 108- 111 ,(2018) , 10.1109/ISPSD.2018.8393614