Influence of doping profiles and chip temperature on short-circuit oscillations of IGBTs
作者： Vera van Treek , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Christian Sandow , Roman Baburske
DOI: 10.1109/ISPSD.2018.8393614
关键词:
摘要: TCAD simulations of 1200 V IGBT with different p-emitter and field-stop doses, junction temperatures show that oscillations are likely to occur for short-circuit conditions relatively low bipolar current gains the IGBT's collector-side p-n-p-transistor relative respectively. Measurement results from IGBTs in qualitative agreement simulation results. Accordingly, can be controlled by an adjustment gain means appropriate design.
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