Monolithic transistor coupled electroluminescent diode

摘要: Modulated signal levels in the range of 1 μV, as is typical for radar returns, can be used to achieve a useful modulated optical that launched into fiber optic waveguide transmission remote location processing. The device invention achieves such conversion by suitably integrating high gain bipolar transistor with an electroluminescent diode, light emitting diode or laser, compact monolithic structure. In one structural configuration, comprises emitter comprising layer doped n-(Al,Ga)As supported on base p-GaAs, turn collector undoped n-GaAs n-(Al,Ga)As. this embodiment light-emitting formed p-n junction between and supporting p-GaAs layer, p + -GaAs substrate. Collector contact made backside An electrical at amplified action, resulting output LED, which may either Burrus edge-emitting configuration. Direct amplification radiation omitting introducing emitter.