(GaAl)As/GaAs heterojunction phototransistors with high current gain
作者： Makoto Konagai , Kosho Katsukawa , Kiyoshi Takahashi
DOI: 10.1063/1.323393
关键词:
摘要: n‐Ga1−xAlxAs/p‐GaAs/n‐GaAs heterojunction transistors with high Al concentrations have been fabricated by the conventional liquid‐phase epitaxial method. Electrical measurements showed that a common emitter current gain of up to 1600. The varies injection level because defect‐current component, which is recombination in depletion region. It has made clear, however, effect defect was reduced grown at low temperature (∼750 °C). variation electron diffusion length Ln device operating calculated using each temperature. Furthermore, phototransistor characteristics widely investigated.
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