Method and apparatus for storing and reading out charge in an insulating layer
作者： R Wilson , G Possin , G Ellis
DOI:
关键词: Beam (structure) 、 Optoelectronics 、 Cathode ray 、 Electrical conductor 、 Voltage 、 Electrical engineering 、 Layer (electronics) 、 Reading (computer) 、 Electric charge 、 Materials science 、 Secondary emission
摘要: An electron beam addressable memory is disclosed in which information stored as an electric charge a multilayered target. The comprises conductive layer, insulating layer having plurality of storage sites, n-type and p-type semiconductor material p-n junction therebetween. method writing causes to be at selected sites the layer. reading current through junction, reverse biased, vary magnitude depending upon whether or not impinges on charged site. read write beams are preferably same energy different voltage applied during than writing. In another embodiment, conducting omitted effect voltages produced by secondary emission from
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