Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering
作者： C. A. Dimitriadis , J. I. Lee , P. Patsalas , S. Logothetidis , D. H. Tassis
DOI: 10.1063/1.370336
关键词: Schottky diode 、 Analytical chemistry 、 Deposition (law) 、 Optoelectronics 、 Sputter deposition 、 Thermal diffusivity 、 Materials science 、 Diode 、 Sputtering 、 Noise (electronics) 、 Order of magnitude
摘要: The effects of the substrate bias voltage and deposition temperature on electrical characteristics 1/f noise TiNx/n-Si Schottky diodes fabricated by reactive magnetron sputtering are investigated. As varies from −40 to −100 V, ideality factor remain almost unchanged whereas intensity as a function current shows shift parallel about one order magnitude. At low levels, is proportional attributed mobility diffusivity fluctuation. higher square bulk traps mainly near interface. Analysis measurements that both Hooge parameter trap density interface first increased then decreased negative increases V. This in contrast with temperatur...
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