Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature
作者： N. Konofaos , C. T. Angelis , E. K. Evangelou , Y. Panayiotatos , C. A. Dimitriadis
DOI: 10.1063/1.1352658
关键词:
摘要: Amorphous carbon (α-C) films were deposited on Si substrates by magnetron sputtering at room temperature, followed a deposition of TiN top the to form heterojunction devices. The electrical properties TiN/α–C/Si devices characterized capacitance–voltage, conductance–voltage, and current–voltage measurements as function temperature. results showed that behaved like metal–insulator–semiconductor low temperatures, while higher exhibited high internal conductivity overall performance was similar adequately modeled found follow thermionic field emission model. an excellent behavior metallic electrode
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