A single-frequency approximation for interface-state density determination

摘要: Fast interface state densities in the Si Si 2 system can be determined by measurements of the MIS capacitor admittance. Traditional detailed analysis require elaborate frequency dependent techniques. The more commonly used approximation techniques are difficult to interpret for interface state densities less than 1× 10 11 eV− 1 cm− 2. We present here a new single frequency technique as an approximation method which provides quantitative criteria on the quality of such interfaces. The data required are a single high frequency capacitance …