Electrical properties of r.f. magnetron sputtered BaxSr1−xTiO3 films on multi-layered bottom electrodes for high-density memory application
作者： B. Panda , C. B. Samantaray , A. Dhar , S. K. Ray , D. Bhattacharya
关键词: Optoelectronics 、 Cavity magnetron 、 Materials science 、 Strontium titanate 、 MIS capacitor 、 Ohmic contact 、 Poole–Frenkel effect 、 Silicon 、 Thin film 、 Sputter deposition
摘要: BaxSr1−xTiO3 (BST) thin films have been deposited by r.f. magnetron sputtering on silicon and platinum-coated substrates with different buffer barrier layers. Electrical properties of BST evaluated using both metal–insulator–semiconductor (MIS) metal–insulator–metal (MIM) structures. MIS capacitor C–V G–V characteristics utilized to determine the fixed charge density, interface trap density distribution in bandgap. Si/SiO2/SiN/Pt Si/SiO2/Ti/TiN/Pt multilayer bottom electrodes used for fabrication MIM capacitors. The role electrode, processing temperature Ba Sr ratio electrical investigated. Current–voltage behavior has indicated an ohmic nature at lower voltages Poole–Frenkel conduction higher voltages. Deposited shown excellent time-dependent dielectric breakdown under constant-current stressing.
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