作者: Jaemo Im , O. Auciello , P. K. Baumann , S. K. Streiffer , D. Y. Kaufman
DOI: 10.1063/1.125839
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摘要: Precise control of composition and microstructure is critical for the production (BaxSr1−x)Ti1+yO3+z (BST) dielectric thin films with large dependence permittivity on electric field, low losses, high electrical breakdown fields that are required successful integration BST into tunable high-frequency devices. Here, we present results composition-microstructure-electrical property relationships polycrystalline produced by magnetron-sputter deposition, appropriate microwave millimeter-wave applications such as varactors frequency triplers. Films controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target background processing gas pressure. It was determined (Ba+Sr)/Ti ratios these could be adjusted 0.73 to 0.98 changing total (Ar+O2) process pressure, while O2/Ar ratio did not strongly affect metal ion composition. Film crystalline structure properties ...