Hybrid molecular beam epitaxy for the growth of complex oxide materials
作者： A.P. Kajdos , S. Stemmer
DOI: 10.1016/B978-1-78242-245-7.00003-8
关键词: Complex oxide 、 Nanotechnology 、 Volatility (chemistry) 、 Inorganic chemistry 、 Stoichiometry 、 Molecular beam epitaxy 、 Materials science
摘要: Abstract Hybrid molecular beam epitaxy (HMBE) uses both solid and metal-organic sources, has been highly successful in the growth of complex oxides that have poorly volatile constituents. The high volatility precursor allows for rates, improved flux stability, adsorption-controlled growth, which lead to unprecedented stoichiometry control. This chapter discusses principles HMBE oxide materials, importance MBE window, requirements precursors. We present examples excellent electrical quality films grown by HMBE.
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