Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition
作者： Roman Engel-Herbert , Yoontae Hwang , Joël Cagnon , Susanne Stemmer
DOI: 10.1063/1.3204465
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摘要: Zirconium oxide films were grown by chemical beam deposition with zirconium tert-butoxide as the source on (2×4) reconstructed, n-type In0.53Ga0.47As surfaces obtained after As decapping. Optimized growth conditions yielded ZrO2/In0.53Ga0.47As interfaces that free of second phases. Capacitance-voltage (CV) measurements different top electrodes showed a frequency dispersion less than 2% per decade in accumulation. The accumulation capacitance and horizontal position CV curve independent temperature, while inversion was strongly temperature dependent. Flat band voltages correlated work function metal electrode.
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