作者: C. J. Lu , L. A. Bendersky , K. Chang , I. Takeuchi
DOI: 10.1063/1.1524315
关键词:
摘要: The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 (BSTO) film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. dominant defects in the are edge-type threading dislocations (TDs) with Burgers vectors b=〈100〉 〈110〉. Pure-screw TDs partial mixed character were also observed. A rapid reduction density occurred after growth first 100 nm BSTO adjacent to interface. In top layer film, all perfect while those b=〈110〉 usually dissociated into two partials small separation (a few nanometers). However, near-interface many split or three partials. high extended stacking faults displacement 12〈110〉 type associated half loops. mechanisms for generation, dissociation ev...