Structural and electrical characterizations of BiFeO3 capacitors deposited by sol-gel dip coating technique

摘要: Abstract Bismuth ferrite (BiFeO3) thin films were deposited by sol–gel dip coating (SGDC) technique on Si-P(100) and glass substrates to investigate the structural electrical characteristics. The aluminum (Al) metal contacts formed samples fabricate metal-oxide-semiconductor (MOS) capacitors. fabricated MOS structures characterized electrically capacitance–voltage (C–V) conductance–voltage (G/ω–V) measurements. characterizations performed X-ray diffraction scanning electron microscopy. compositions of investigated energy-dispersive spectroscopy. results exhibit that pure rhombohedral perovskite phase without any elemental contamination. Average grain sizes BiFeO3 silicon wafers found be about 34,50 30,00 nm, respectively. In addition, while substrate porous surface, those dense microstructure with a homogenous surface. Moreover, C–V G/ω–V characteristics are sensitive applied voltage frequency due dependent charges (Nss) series resistance (Rs). peak values Rs have been decreased from 2,6 kΩ 40 Ω, Nss is varied 6,57 × 1012 3,68 × 1012 eV− 1 cm− 2 increasing in frequency. Consequently, polycrystalline successfully SGDC dielectric layer exhibits stable insulation