Contact formation for ultra-scaled devices
作者： Ruilong Xie , Balasubramanian Pranatharthiharan , David V. Horak , Shom Ponoth
DOI:
关键词: Semiconductor device 、 Metal gate 、 Nanotechnology 、 Substrate (electronics) 、 Transistor 、 Contact formation 、 Optoelectronics 、 Layer (electronics) 、 Materials science 、 Gate oxide
摘要: Embodiments of the invention provide approaches for forming gate and source/drain (S/D) contacts. Specifically, semiconductor device includes a transistor formed over substrate, S/D contact trench-silicide (TS) layer positioned adjacent transistor, wherein at least portion is aligned TS layer. This structure enables with layer, thereby decreasing distance between source/drain, which desirable ultra-area-scaling.
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