DRAM cell with enhanced SER immunity
作者： David M. Fried , Jeffrey S. Brown , Edward J. Nowak , Beth Ann Rainey
DOI:
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摘要: A memory cell that has first and second fully depleted transfer devices each having a body region diffused electrodes. The differential storage capacitor at least one node abutting in electrical contact with of the electrodes devices. primary capacitance plurality inherent capacitances, wherein capaictive value is approximately five times greater than capacitances.
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