Device component forming method with a trim step prior to sidewall image transfer (SIT) processing
作者： Qiqing C. Ouyang , Charles W. Koburger , Toshiharu Furukawa , David V. Horak
DOI:
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摘要: Disclosed herein is an imaging method for patterning component shapes (e.g., fins, gate electrodes, etc.) into a substrate. By conducting trim step prior to performing either additive or subtractive sidewall image transfer process, the avoids formation of loop pattern in hard mask and, thus, post-SIT process requiring alignment sub-lithographic features form with discrete segments. In one embodiment trimmed SIT so that not formed. another oxide layer and memory are used mandrel process. A then protect portions during etch back
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