Implant Depth Influence on InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation
作者： Zhao Jie , Chen Jie , Wang Yong-Chen , Han De-Jun
DOI: 10.1088/0256-307X/23/4/043
关键词: Photoluminescence 、 Ion 、 Nitrogen 、 Ion implantation 、 Quantum well 、 Band gap 、 Blueshift 、 Analytical chemistry 、 Phosphorus 、 Materials science
摘要: We investigate quantum well intermixing of a double-quantum-well structure caused by phosphorus ion implantation means photoluminescence (PL). The is performed at the energy 120 keV with dose ranging from 1×1011 to 1×1014/cm2. rapid thermal annealing temperature 700°C for 30 s under pure nitrogen protection. PL measurement shows that band gap blueshift influenced depth implantation. upper which closer implanted vacancies enhanced faster than lower (<5×1011/cm2). When over 1012/cm2, both wells increases and finally two peaks combine together as one peak, indicating results in total wells.
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