Photoluminescence Study on InGaAs/InP MQW Structure with F + , Ne + -Implant Induced Compositional Disordering.
作者： Jie Zhao , Yongchen Wang
DOI: 10.1088/0256-307X/11/11/015
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摘要: A photoluminescence (PL) study on InGaAs/InP multiple-quantum wells (MQW) structure with F+, Ne+ implant induced compositional disordering (IICD) is presented. The effects of energy shift PL peak depend ion dose, annealing conditions, target temperature and implanted species. results indicate that the optimum condition approximately 750°C for 30 s, dose which caused biggest blue around 1 × 1014 cm-2 room implantation 5 elevated 200°C implantation. With same annealing, F+ peak. This result suggests radiation enhanced diffusion by neutral dominates IICD processing. secondary mass spectroscopy analysis indicates slightly layer interdiffusion makes square potential well smear in band gap shift.
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