Destruction mechanism of III‐V compound quantum well structures due to impurity diffusion

摘要: Recent experiments have shown that quantum well structures grown on a GaAs substrate can be destroyed by dopant diffusion. It is observed existing models proposed to explain the phenomena are not in accordance with most available experimental results. We propose an alternative mechanism destruction phenomenon. The based effect of Fermi level concentrations charged point defects which contribute diffusion processes. This conceptually simple consistent results qualitative basis. In this mechanism, doping and type (p or n) primary importance, some other detailed atomistic nature species. Furthermore, it presence important, its motion, i.e.,