Photoluminescence of extended defects in heterostructures with InAlAs metamorphic buffer at different excitation wavelengths
作者： S.S. Pushkarev , G.B. Galiev , E.A. Klimov , V.B. Kopylov
DOI: 10.1016/J.JLUMIN.2020.117412
关键词: Power density 、 Charge carrier 、 Quantum well 、 Photoluminescence 、 Excitation 、 Heterojunction 、 Photon energy 、 Molecular physics 、 Band gap 、 Materials science
摘要: Abstract We report the observation of photoluminescence (PL) energy levels presumably associated with extended defects in metamorphic buffer InxAl1–xAs x = 0.05 → 0.65 at photon range 0.8–1.2 eV, while quantum well PL was observed at 0.6–0.8 eV. The HEMT heterostructures In0.65Al0.35As/In0.70Ga0.30As/In0.65Al0.35As (QW) and different defectiveness degree were studied. Interband excitation by lasers a wavelength 409, 450, 532 nm, subband infrared (IR) laser 1064 nm (with photons less than bandgap layer) both result appearance “defect” PL. Compared to visible excitation, IR illumination same power density increases intensity samples high twins an order magnitude, whereas more perfect stacking faults threading dislocations it causes increase “defect-to-QW” intensities ratio. study as function pump 10–3600 W/cm2 reveals that non-radiative recombination plays important role during photoexcited charge carriers from because dependence on is mainly sublinear for QW law exponent 1.2–1.4 observed.
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