Galib Galiev
机构: Institute of Ultrahigh Frequency Semiconductor Electronics of RAS, Moscow
主页: isvch.ru
每年引用次数
引用次数
引用: 972
H-指数: 16
I10-指数 : 32
出版物: 212
Distinctive features of boron distribution in silicon under high-dose ion-implantation doping
GB Galiev , VV Saraikin , AR Begishev , VG Mokerov
Sov. Microelectron.; (United States)
1987
Influence of deviations from the crystal lattice periodicity on the semiconductor--metal phase transition in vanadium dioxide
A.S. Ignat'ev , V.G. Poshin , G.B. Galiev , A.R. Begishev
Sov. Phys. - Solid State (Engl. Transl.); (United States)
2
1978
Influence of deviations from stoichiometric composition on the electrical, optical, and electrooptic properties of V$sub 2$O$sub 5$ single crystals
VG Mokerov , GB Galiev ,
Sov. Phys.-Solid State (Engl. Transl.), v. 16, no. 1, pp. 175-176
1974
Low temperature photoluminescence and photoreflectance of metamorphic HEMT structures with high mole fraction of in
DS Romanovskiy , AV Solomonov , SA Tarasov , IA Lamkin
ieee nw russia young researchers in electrical and electronic engineering conference 36 -39
2015
Experimental Determination of the Subband Electron Effective Mass in InGaAs/InAlAs HEMT-structures by the Shubnikov – de Haas Effect at Two Temperatures
N.A. Yuzeeva , G.B. Galiev , E.A. Klimov , L.N. Oveshnikov
Physics Procedia 72 425 -430
2
2015
Generation of THz radiation by photoconductive antennas on based thin films InGaAs and InGaAs/InAlAs.
A.A. Leontyev , K.A. Kuznetsov , G.B. Galiev , G.Kh. Kitaeva
Epj Web of Conferences 195 02007
2018
The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry
L.A. Ponomarenko , D.T.N. de Lang , A. de Visser , V.A. Kulbachinskii
Solid State Communications 130 ( 10) 705 -710
14
2004
Sensitivity of terahertz photoconductive antenna based on multilayer structure grown on different substrate crystallographic orientation
V.R. Bilyk , A.M. Buryakov , K.A. Brekhov , D.I. Khusyainov
ieee mtt s international microwave workshop series on advanced materials and processes for rf and thz applications
2017
Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
G.B. Galiev , I.S. Vasil'evskii , S.S. Pushkarev , Е.А. Klimov
Journal of Crystal Growth 366 55 -60
21
2013
Effect of (1 0 0) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs
G.B. Galiev , I.S. Vasil'evskii , E.А. Klimov , S.S. Pushkarev
Journal of Crystal Growth 392 11 -19
10
2014
Photoluminescence of extended defects in heterostructures with InAlAs metamorphic buffer at different excitation wavelengths
S.S. Pushkarev , G.B. Galiev , E.A. Klimov , V.B. Kopylov
Journal of Luminescence 226 117412
1
2020
Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
K. Požela , J. Požela , V. Jucienė , I.S. Vasil'evskii
Acta Physica Polonica A 119 ( 2) 170 -172
5
2011
Generation of THz radiation in the photoconductive antennas based on epitaxial InGaAs films on GaAs substrates of various crystallographic orientations
K.A. Kuznetsov , G.B. Galiev , G.Kh. Kitaeva , E.A. Klimov
international conference laser optics
2018
Influence of state coupling on the electron transport in shallow quantum wells
VA Kulbachinskii , IS Vasil’evskii , RA Lunin , GB Galiev
Revista Mexicana De Fisica 53 ( 7) 66 -69
2007
Properties of (111)A and (111)B GaAs molecular-beam epitaxy
GB Galiev , VG Mokerov , V Yu Volkov , RM Imamov
Journal of Communications Technology and Electronics 44 ( 11) 1256 -1261
1999
Photoluminescence studies of amphoteric silicon behavior in gallium arsenide
GB Galiev , MV Karachevtseva , VG Mokerov , VA Strakhov
DokPh 44 ( 8) 510 -513
1999
Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra
G. B. Galiev , E. A. Klimov , S. S. Pushkarev , A. A. Zaytsev
Semiconductors 54 ( 11) 1417 -1423
2020
High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures
G. B. Galiev , E. A. Klimov , R. M. Imamov , G. V. Ganin
Journal of Surface Investigation-x-ray Synchrotron and Neutron Techniques 10 ( 3) 495 -509
1
2016
Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers
D. I. Khusyainov , C. Dekeyser , A. M. Buryakov , E. D. Mishina
International Journal of Modern Physics B 31 ( 27) 1750195
5
2017
n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties
I. S. Vasil?evskii , G. B. Galiev , G. V. Ganin , R. M. Imamov
Russian Microelectronics 34 ( 2) 78 -87
2005