Experimental Determination of the Subband Electron Effective Mass in InGaAs/InAlAs HEMT-structures by the Shubnikov – de Haas Effect at Two Temperatures
作者： N.A. Yuzeeva , G.B. Galiev , E.A. Klimov , L.N. Oveshnikov , R.A. Lunin
DOI: 10.1016/J.PHPRO.2015.09.087
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摘要: Abstract The electron effective masses m* in different dimensionally quantized subbands InGaAs/InAlAs HEMT-structures have been measured by the Shubnikov – de Haas effect at two temperatures whose ratio was not equal to 2. were found separately for every subband. It realized digital bandpass filtering of oscillation monochromatic oscillations corresponding subbands. We obtained dependence subband on InAs content quantum well.
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